RF components implemented in an analog SiGe bipolar technology

Abstract

Several components for the design of monolithic rf transceivers on silicon substrates, developed in a manufacturable analog SiGe bipolar technology without any significant process alterations, are described. Spiral inductors in the range approximately 0.15-80 nH with typical maximum Q's of 3-20, MOS and MIM capacitors (1-2 pF) with Q's up to 80, and varactors with 40% tuning range and Q's of 20-50 are presented.