Room-temperature oxide field-effect transistor with buried channel

Abstract

In this letter, we introduce an architecture for a room-temperature oxide channel field-effect transistor where the oxide channel material is buried below the gate oxide layer. This architecture has several significant advantages over the surface channel architecture [D. M. Newns, J. A. Misewich, C. C. Tseui, A. Gupta, B. A. Scott, and A. Schrott, Appl. Phys. Lett. 73, 780 (1998).] in coupling capacitance, channel mobility, and channel stability. Although the transconductance in the devices has been improved to 45 μS (at Vd = 1 V and Vg = 2 V for a channel length of 1 μm and width = 150 μm), capacitance measurements show that the surface charge density is still below the optimal theoretical value. © 2000 American Institute of Physics.