Scaling of in_o.7ga_o.3as buried-channel MOSFETs

Abstract

Sub-100 nm short-channel Ino7Ga03As MOSFETs are demonstrated for both depletion- and enhancement-mode devices. High current of 960 μA/um and record transconductance of 793 μS/um have been achieved. Scaling behavior is investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.