Schottky barrier with the degenerate dilute magnetic semiconductor Cd _1-xMn_xSe

Abstract

Consequences of the splitting of the electronic levels in a dilute magnetic semiconductor have been observed by measuring the capacitance of a simple Schottky barrier at 4.2 K in the presence of magnetic fields up to 60 kOe. The material used was a single crystal of degenerately Ga-doped Cd 1-xMnxSe. The variation of the diffusion potential in the semiconductor as a function of magnetic field was deduced from C(V) measurements at 1 MHz. By assuming the presence of an interfacial layer at the metal/semiconductor interface, the derived band conduction splitting is in relatively good agreement with that calculated by using the magneto-optical properties of the material.