Simulation of a simplified design for a nonoscale metal-oxide field effect transistor

Abstract

We describe simulations on a simplified design for a metal-oxide nanoscale Field Effect Transistor (FET). The device features an oxide channel with a high dielectric constant ferroelectric as the gate insulator. In the present model, the gate and source/drain electrodes are unconventionally placed on opposite sides of the channel. Simulations are quantum mechanical and are based on a simplified transport model. Results on a 10 nm. channel device show adequate conductance and ON/OFF ratio, while simulation of a ring oscillator yields an estimated device switching time of 300 fs.