Single polysilicon gate high-density logic using independently-controlled double-gate devices

Abstract

Novel double-gate (DG) CMOS logic with a single polysilicon gate process is proposed using independently biased gates. The unique gate-to-gate coupling of DG devices is exploited to improve circuit density, capacitance, performance, and power in 25 nm logic circuits by halving the number of stacked transistors as well as parallel transistors for implementing logic functions. The performance, power, and design trade-offs as well as layouts for logic gates are analyzed via mixed-mode two-dimensional numerical simulations. © 2005 IEEE.