Si/SiGe CMOS: Can it extend the lifetime of Si?

Abstract

The modifications to the intrinsic and extrinsic aspects of state-of-the-art Si CMOS technology are presented. Measured circuit performance of n-type Si/SiGe FETs proves that a factor of 10 in power-delay is possible. Microwave performance of both n-type and p-type FETs based on strained Si/SiGe also corroborate the result of measured circuit performance. Simulated circuit performance of 0.1 μm Si/SiGe CMOS based on the experimental results is presented and compared to bulk Si CMOS and silicon on insulator technology.