Sodium-induced 2×11×1 surface structural transition on Si(111)

Abstract

Sodium deposited on the cleaved Si(111)2×1 surface induces a 2×11×1 surface structural transition at about 1/2 monolayer coverage. Angle-resolved direct and inverse photoemission reveal the surface to be semiconducting. The measured energy dispersion of the empty Na-induced surface state is only consistent with calculations that favor the threefold-hollow site for the Na adsorption position. Its bonding character (ionic versus covalent) will be discussed. © 1992 The American Physical Society.