Solution-processed metal chalcogenide films for p-type transistors

Abstract

An experiment of solution processing of organic thin film transistors (TFT) to a p-type material, is presented. A soluble precursor was prepared by combining a copper(I) sulfide (Cu 2S) and sulfur (1:2 molar ratio) solution with an indium(III) selenide (In 2se 3) and selenium (1:1) solution. Thermally oxidized silicon wafers were cleaned using a piranha process (4:1 concentrated sulfuric acid to hydrogen peroxide) to prepare the films. The experimental result reveals that it is possible to fabricate preliminary ambipolar TFTs within the same Cu 1-xInSe 2-y material system by preparing films with selenium deficit.