Studies of poorly conducting samples by the low-loss electron method in the scanning electron microscope

Abstract

The low-loss electron (LLE) image in the scanning electron microscope (SEM) shows stronger topographic contrast, less sensitivity to specimen charging and a shallower information depth in comparison with the more familiar secondary electron (SE) imaging method. When working with a poorly conducting or insulating sample the beam energy must be reduced to minimize the net charging current at the surface of the specimen. Even if this is done correctly the topographic contrasts in the LLE image can still be considered stronger than in the SE image. The possibility of obtaining a LLE image is demonstrated with an uncoated photoresist.