Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition

Abstract

We report on a novel fabrication method of a nanochannel ionic field effect transistor (IFET) structure with sub-10-nm dimensions. A self-sealing and self-limiting atomic layer deposition(ALD) facilitates the fabrication of lateral type nanochannels smaller than the e- beam or optical lithographic limits. Using highly conformal ALD film structures, including TiO2. TiO2/TiN,and Al2O3/Ru, we have fabricated lateral sun-10-nm nanochannels with good control over channel diameter, Nanochannels surrounded by core/shell (high-k dielectric/metal) layers give rise to all-auound-gatin IFETs, an important functional element in an electrofluidic based circuit system. © 2010 American Chemical Society.