Surface characteristics of plasma treated WN_x/GaAs contacts from C-V measurements

Abstract

The density and the average penetration depth of acceptors near the semiconductor surface were calculated from C-V and J-V measurements on p+/n Shannon structures. The WNX/GaAs diodes were fabricated using chemically and plasma cleaned GaAs surfaces and annealed at several temperatures. It was found that the semiconductor surface cleaning before metal deposition is a key factor to control the rectifying properties of this type of metal/semiconductor contact.