Surface core-level shifts for the (110) cleavage face of III-V semiconductors: InAs(110)

Abstract

The lineshapes of the In 4d and As 3d core-levels in InAs(110) have been studied using least squares analysis and the surface core-level shifts are found to be +0.28+or-0.02 and -0.30+or-0.02 eV respectively. Consequently, the surface core-level shifts have now been determined for the entire family of III-V semiconductor surfaces which includes GaX(110) and InX(110), where X=P, As and Sb. It is shown that the quantity Delta EC- Delta EA, where Delta EC is the cation surface core-level shift and Delta EA is the anion surface core-level shift, exhibits a systematic dependence upon the semiconductor ionicity.