"surface dislocation" process for surface reconstruction and its application to the silicon (111) 7×7 reconstruction

Abstract

The silicon (111) 7×7 surface reconstruction has been observed by surface-sensitive transmission-electron microscopy. The topography of the reconstructed surface is accounted for by the cooperative motion of surface atoms over large areas via a new process involving the generation of "surface dislocations" to relieve the backbond-induced surface stresses. © 1983 The American Physical Society.