Surface reconstruction on Al(100) and Al(110) surfaces

Abstract

Al surfaces grown epitaxially on GaAs(100) substrates exhibit a nearly atomically smooth surface morphology which permits the formation of various clean and impurity-induced surface reconstructions. The Al(100)-c(2×2) reconstruction can be ascribed to a two-dimensional Fermi-surface instability. Arguments are given that suggest a charge-density-wave mechanism. © 1981 The American Physical Society.