Symmetry of electron states in GaP

Abstract

We show that the symmetry of bound electron states in GaP depends upon the choice of origin for the group operations and hence upon the location of impurity in the crystal lattice. This provides an explanation of the discrepancy between the high radiative efficiency associated with group VI donors and group V isoelectronic centers and the low efficiency of group IV donors (Si) in GaP. © 1968 The American Physical Society.