Temperature effects on the formation of the Sb/InP(110) interface

Abstract

The adsorption of Sb on UHV cleaved InP(110) surfaces was studied for substrate temperatures of 300 K (RT) and 100 K (LT) using high resolution soft X-ray photoemission spectroscopy. The In 4d, Sb4d core levels, and the valence band emission were monitored from submonolayer coverages of Sb up to around 20 monolayers. At LT Sb is found to form a homogeneous amorphous film rather than islands on an ordered first monolayer as observed at RT. Furthermore, Fermi level shifts were derived from energy shifts in the In 4d emission lines. Complementing the different overlayer growth modes the Fermi level shift gradually increases with Sb coverage at LT, whereas at RT a Sb coverage of 0.5 ML leads to a maximum shift which is diminished with the completion of the first ordered monolayer. © 1989.