The analysis of dislocations in strained III-V semiconductor crystals using elastobirefringence

Abstract

If the sign of the strain in a III-V crystal is known, it is possible to characterize dislocations in that crystal completely as regards their edge components. The technique for doing this is discussed and applied to the particular case of GaAs substrates on which Ga1-xAlxAs epitaxial layers have been grown by LPE.