The Role of Damage in the Annealing Characteristics of Ion Implanted Si

Abstract

Carrier concentration profiles are presented for Si which has been implanted with a low (3 x 1013 em-2), intermediate (3 x 1014 cm-2) or high (8 x 1015 cm-2) dose of 280 keV P31 ions at room temperature and subjected to a 30 min post implantation anneal in the temperature range 550°-850°C. The annealing behavior of these samples is correlated with the amount of damage produced by the room temperature implantation. If a continuous amorphous region is present, ions within this region become electrically active and uncompensated during the epitaxial recrystallization of the layer between 550° and 600°C. These results are generalized to provide a model for the annealing characteristics observed for room temperature and elevated temperature ion implanted Si layers. © 1970, The Electrochemical Society, Inc. All rights reserved.