The submicron inverted MODFET I-GaAs/N⁺-AlGaAs: a 2D Monte-Carlo study

Abstract

A two-dimensional Monte-Carlo simulation of an inverted MODFET structure I-GaAs/N+-AlGaAs has been performed. The influence of various technological parameters have been studied such as the GaAs undoped layer thickness, the AlGaAs layer thickness, doping level and aluminum composition, the gate length or the temperature. The results show that higher transconductance and cut-off frequency values should be obtained as compared to conventional MODFET structures. © 1988.