Thickness dependence of the photoconductivity of phosphorus-doped hydrogenated amorphous silicon

Abstract

The thickness and spectral dependences of the photoconductance of phosphorus-doped hydrogenated amorphous silicon show that the surface and interface layers are more photosensitive than the bulk, and further, that the interface layer is the more photoconductive of the two boundary layers. We interpret the results as further evidence for band bending at the film boundaries.