Time-resolved measurements of self-heating in SOI and strained-Si MOSFETs using off-state leakage current luminescence

Abstract

A new non-invasive optical technique is used to measure time-resolved temperature of advanced CMOS FETs. The technique uses time-resolved photon emission microscopy to measure the temperature-dependent luminescence of off-state leakage current. The method measures the temperature of the device channel, independent of surrounding materials or interconnects. The technique has been used to measure, for the first time, self-heating dynamics in SOI and strained-Si nFETs.