Triggered single photon emission up to 77K from ordered array of surface curvature-directed mesa-top GaAs/InGaAs single quantum dots

Abstract

We demonstrate triggered single photon emission up to 77K from an ordered 5x8 array of InGaAs single quantum dots (SQDs). The SQDs are grown selectively on patterned mesa tops utilizing substrate-encoded size-reducing epitaxy (SESRE). It exploits designed surface-curvature stress gradients to preferentially direct atom migration from mesa sidewalls to the top during growth. The emission from the SQDs exhibits a g(2)(0) of 0.19 ± 0.03 at 8K and decent emission spectral uniformity (standard deviation >1% of emission wavelength). The SESRE QDs are inherently compatible with on-chip integrated light manipulation elements, thereby enabling a path towards integrated nanophotonic systems for quantum information processing.