Ultra high density scanning electrical probe phase-change memory for archival storage

Abstract

The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.2 is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally. © 2011 The Japan Society of Applied Physics.