Vibrational modes of defects in GaP

Abstract

Localized vibrational modes of impurities in gallium phosphide are observed in infrared absorption. Tentative assignments for the observed absorption bands are as follows: ωL=453 cm-1 is due to Si Ga, 464 cm-1 to NP or OP 569 cm -1 to 11BGa, and 592 to 10B Ga. Other defect bands are observed at 443, 527, and 606 cm -1. However, present experimental results are not sufficient to permit identification of the impurities. © 1969 The American Institute of Physics.