Voids-free Die-level Cu/ILD Hybrid bonding

Abstract

Multiple moisture evolutions/adsorptions pathways on the dielectric film surfaces and in the film bulk were linked to bonding voids contributions based on Zhuravlev model in silica. A die-to-die (DtD) and die-to-wafer (DtW) Cu/interlayer dielectric (ILD) hybrid bonding methodology has been successfully developed to reduce and eliminate moisture related voids with defect-free results.