Voltage‐dependent imaging of antimony on the GaAs(110) surface

Abstract

Using a scanning tunnelling microscope, voltage‐dependent imaging of antimony on the GaAs(110) surface has been performed. For negative sample voltages, the images reflect surface dangling bonds. Depending on the magnitude of the voltage, either one or both of the Sb atoms in the surface unit cell are seen. At positive voltage the density of surface‐states is observed to be greatly reduced compared to negative voltages. The results are analysed within the context of a simple tight‐binding model for a one‐dimensional biatomic chain. 1988 Blackwell Science Ltd