Wideband millimeter wave PIN diode SPDT switch using IBM 0.13μm SiGe technology

Abstract

Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM. 13um SiGe technology is demonstrated. A SPDT reflective switch targeting 60GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12dB return loss and 25 to 35 dB of isolation. © 2007 EuMA.