Intrinsic, heterointerface excitonic states in GaAs(n)/Al0.3Ga0.7As(p) double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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28 results for J.A. Bradley
Quantum-confined excitonic states at high-quality interfaces in GaAs(n type)/AlxGa1-xAs(p type) double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Physical Review B
Electronic structure of quantum-well states revealed under high pressures
- D.J. Wolford
- T.F. Kuech
- et al.
- 1988
- Superlattices and Microstructures
Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Applied Physics Letters
Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Journal of Applied Physics
Time decays of donor-bound excitons in GaAs under pressure-induced-X crossover
- H. Mariette
- D.J. Wolford
- et al.
- 1986
- Physical Review B
Pressure dependence of shallow bound states in gallium arsenide
- D.J. Wolford
- J.A. Bradley
- 1985
- Solid State Communications
Efficient visible luminescence from hydrogenated amorphous silicon
- D.J. Wolford
- B.A. Scott
- et al.
- 1983
- Physica B+C