Collimated sputtering of TiN/Ti liners into sub-half-micrometer high aspect ratio contacts/lines
- R.V. Joshi
- S.B. Brodsky
- 1992
- Applied Physics Letters
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16 results for S.B. Brodsky
Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology
- M.B. Ketchen
- D.J. Pearson
- et al.
- 1991
- Applied Physics Letters
Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology
- L. Dori
- A.C. Megdanis
- et al.
- 1990
- Thin Solid Films
Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections
- R.V. Joshi
- D. Moy
- et al.
- 1989
- Applied Physics Letters
Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics
Formation of TiSi2 and TiN during nitrogen annealing of magnetron sputtered Ti films
- E.D. Adams
- K.Y. Ahn
- et al.
- 1985
- JVSTA