Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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111 results for F.K. LeGoues
Near band-edge photoluminescence in relaxed Si1-xGex layers
- L. Tilly
- P.M. Mooney
- et al.
- 1995
- Applied Physics Letters
Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Evolution of strain relaxation in step-graded SiGe/Si structures
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Influence of misfit dislocations on the surface morphology of Si1-xGex films
- M.A. Lutz
- R.M. Feenstra
- et al.
- 1995
- Applied Physics Letters
Relaxation mechanism of Ge islands/Si(001) at low temperature
- F. Legoues
- J. Tersoff
- et al.
- 1995
- Applied Physics Letters
Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge
- P.M. Mooney
- F. Legoues
- et al.
- 1994
- Applied Physics Letters
Relaxation of SiGe thin films grown on Si/SiO2 substrates
- F. Legoues
- A.R. Powell
- et al.
- 1994
- Journal of Applied Physics
Nucleation of dislocations in SiGe layers grown on (001)Si
- P.M. Mooney
- F.K. LeGoues
- et al.
- 1994
- Journal of Applied Physics
New approach to the growth of low dislocation relaxed SiGe material
- A.R. Powell
- Subramanian S. Iyer
- et al.
- 1994
- Applied Physics Letters