Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors
- J.A. Van Vechten
- J.F. Wager
- 1985
- Journal of Applied Physics
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3 results for J.F. Wager
Asymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: Role of the kinetic energy
- J.A. Van Vechten
- J.F. Wager
- 1985
- Physical Review B
Atomic model for the M center in InP
- J.F. Wager
- J.A. Van Vechten
- 1985
- Physical Review B