Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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67 results for J.N. Burghartz

Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- - Joachim N. Burghartz
  - John D. Cressler
  - et al.
- 1992
- IEEE Electron Device Letters
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- - Joachim N. Burghartz
  - Andrew C. Megdanis
  - et al.
- 1991
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- - Joachim N. Burghartz
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- - Gary L. Patton
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
Selective Epitaxy Base Transistor (SEBT)
- - J.N. Burghartz
  - B.J. Ginsberg
  - et al.
- 1988
- IEEE Electron Device Letters
Analysis of generic spiral-coil RF transformers on silicon
- - K.T. Ng
  - B. Rejaei
  - et al.
- 2000
- SiRF 2000
Integrated multilayer RF passives in silicon technology
- - J.N. Burghartz
- 1998
- SiRF 1998
Spiral and solenoidal inductor structures on silicon using Cu-damascene interconnects
- - D. Edelstein
  - J.N. Burghartz
- 1998
- IITC 1998
5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology
- - M. Soyuer
  - J.O. Plouchart
  - et al.
- 1997
- RFIC 1997
Silicon RF technology - The two generic approaches
- - Joachim N. Burghartz
- 1997
- ESSDERC 1997