Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures
- P. Asoka-Kumar
- T.C. Leung
- et al.
- 1992
- Journal of Applied Physics
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6 results for T.C. Leung
Positron annihilation at the Si/SiO2 interface
- T.C. Leung
- Z.A. Weinberg
- et al.
- 1992
- Journal of Applied Physics
Centroid shift of γ rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures
- T.C. Leung
- Y. Kong
- et al.
- 1991
- Applied Physics Letters
SiO2/Si interface properties using positrons
- P. Asoka-Kumar
- K.G. Lynn
- et al.
- 1991
- Physical Review B
Microvoids and defect chemistry at the SiSiO2 interface studied by positron annihilation depth profiling
- G.W Rubloff
- B Nielsen
- et al.
- 1990
- Vacuum
Microvoids at the SiO2/Si interface
- Bent Nielsen
- K.G. Lynn
- et al.
- 1989
- Physical Review B