Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- J. Martín-Martínez
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.