Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers
- Li Gao
- Xin Jiang
- et al.
- 2007
- Physical Review Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.