Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etching
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1993
- Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.