Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- Annual Proceedings - Reliability Physics (Symposium)
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.