The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells
- J.L.M. Oosthoek
- D. Krebs
- et al.
- 2012
- Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.