Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IEEE Electron Device Letters
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This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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3 results for Sy Lee
CVD Co capping layers for Cu/low-k interconnects: Cu em enhancement vs. Co thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IITC/MAM 2011
Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2013
- Microelectronic Engineering