Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
- J. Knoch
- S. Mantl
- et al.
- 2005
- Solid-State Electronics
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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91 results for Joerg Appenzeller
Frequency response of top-gated carbon nanotube field-effect transistors
- Dinkar V. Singh
- Keith A. Jenkins
- et al.
- 2004
- IEEE TNANO
Electronics and optoelectronics with carbon nanotubes
- Phaedon Avouris
- Joerg Appenzeller
- 2004
- Industrial Physicist
Transport in ropes of carbon nanotubes: Contact barriers and Luttinger liquid theory
- Th. Hunger
- B. Lengeler
- et al.
- 2004
- Physical Review B - CMMP
High performance of potassium n-doped carbon nanotube field-effect transistors
- M. Radosavljević
- J. Appenzeller
- et al.
- 2004
- Applied Physics Letters
Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2004
- Nano Letters
Frequency dependent characterization of transport properties in carbon nanotube transistors
- J. Appenzeller
- D.J. Frank
- 2004
- Applied Physics Letters
Electrical properties and transport in boron nitride nanotubes
- M. Radosavljević
- J. Appenzeller
- et al.
- 2003
- Applied Physics Letters
Carbon nanotube electronics
- Phaedon Avouris
- Joerg Appenzeller
- et al.
- 2003
- Proceedings of the IEEE
Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors
- S.J. Wind
- J. Appenzeller
- et al.
- 2002
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures