Mobility and Dit distributions for p-channel MOSFETs with HfO 2/LaGeO x passivating layers on germanium
- C. Andersson
- M.J. Süess
- et al.
- 2011
- Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.