Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric
- Davood Shahrjerdi
- Junghyo Nah
- et al.
- 2010
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.