Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface
- P.E. Batson
- K.L. Kavanagh
- et al.
- 1986
- Physical Review Letters
Publications
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177 results for J. Woodall
An In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMT
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE Electron Device Letters
Fermi-level pinning by misfit dislocations at GaAs interfaces
- J. Woodall
- G.D. Pettit
- et al.
- 1983
- Physical Review Letters
III-V compounds and alloys: An update
- Jerry M. Woodall
- 1980
- Science
Photoassisted electrolysis of water by visible irradiation of a p-type gallium phosphide electrode
- Micha Tomkiewicz
- Jerry M. Woodall
- 1977
- Science
InAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
Base recombination in high performance InGaAs/InP HBTs
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- Device Research Conference 1993
Temperature-Dependent Composition, Ordering, and Band Bending at Gap(100) Surfaces
- C.L. Lin
- L.J. Brillson
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991