Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.