Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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465 results at IEEE T-ED

OFF-State Leakage and Performance Variations Associated with Germanium Preamorphization Implant in Silicon-Germanium Channel pFET
- - Vishal A. Tiwari
  - Rama Divakaruni
  - et al.
- 2018
- IEEE T-ED
FinFET external resistance analysis by extended shift-and-ratio method
- - Chen Zhang
  - Zuoguang Liu
  - et al.
- 2018
- IEEE T-ED
Series Resistance Reduction with Linearity Assessment for Vertically Stacked Junctionless Accumulation Mode Nanowire FET
- - Anil K. Bansal
  - Manoj Kumar
  - et al.
- 2018
- IEEE T-ED
Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In_0.53Ga_0.47As Ultrathin-Body MOSFETs and Mitigation Measures
- - Saurabh Sant
  - Paulina Aguirre
  - et al.
- 2018
- IEEE T-ED
Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs - Part-II: AC stress and recovery
- - Narendra Parihar
  - Richard G. Southwick
  - et al.
- 2018
- IEEE T-ED
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, Part-I: DC stress and recovery
- - Narendra Parihar
  - Richard G. Southwick
  - et al.
- 2018
- IEEE T-ED
3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes
- - Anil K. Bansal
  - Charu Gupta
  - et al.
- 2018
- IEEE T-ED
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditions
- - Narendra Parihar
  - Uma Sharma
  - et al.
- 2018
- IEEE T-ED
Analytical Modeling of Parasitic Capacitance in Inserted-Oxide FinFETs
- - R. Singh
  - Anshul Gupta
  - et al.
- 2017
- IEEE T-ED
Z²-FET as Capacitor-Less eDRAM Cell for High-Density Integration
- - Carlos Navarro
  - Meng Duan
  - et al.
- 2017
- IEEE T-ED