Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- M.A. Tischler
- B.D. Parker
- et al.
- 1991
- Journal of Electronic Materials
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
118 results at Journal of Electronic Materials
Confirmation of large lattice relaxation of the DX center by extended photo-ionization cross-section measurements
- G. Northrop
- P.M. Mooney
- 1991
- Journal of Electronic Materials
Analysis of the vacancy-interstitial model of DX centers
- T.N. Morgan
- 1991
- Journal of Electronic Materials
Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs
- P.M. Mooney
- T.N. Theis
- et al.
- 1991
- Journal of Electronic Materials
Bistability of the DX center in GaAs and AlxGa1-xAs, and experimental tests for negative U of the DX level
- T.N. Theis
- P.M. Mooney
- et al.
- 1991
- Journal of Electronic Materials
The mechanical behavior of silicon during small-scale indentation
- G.M. Pharr
- W.C. Oliver
- et al.
- 1990
- Journal of Electronic Materials
Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substrates
- H. Shen
- Fred H. Pollak
- et al.
- 1990
- Journal of Electronic Materials
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials
Velocity-field characteristics of electrons in doped GaAs
- W.Ted Masselink
- Thomas F. Kuech
- 1989
- Journal of Electronic Materials