65nm SOI CMOS SoC technology for low-power mmwave and RF platform

Abstract

An RF and mmWave platform developed in 65nm SOI CMOS technology is presented. The SOI FET performance in a wired cell is measured up to f T=300GHz and 200GHz for NFET and PFET. Ring oscillator records 3.6psec minimum inverter stage delay. Back-end-of-line Vertical Native Capacitor (VNCAP) and on-chip inductor performances are reported. The performance scaling trends of mmWave PLL front-end components are presented. © 2008 IEEE.