Corrections to proximity effects in electron beam lithography. II. Implementation

Abstract

Mathematical formulations for the correction of proximity effects in electron beam lithography have been developed in the preceding paper. The implementation of these techniques to practical electron lithographic patterns involves (1) an efficient evaluation of the proximity interaction between every pair of shapes in the pattern. This interaction can be computed explicitly in limited cases; an algorithm for general cases is described. (2) The solution of the linear equations that yield the corrections to proximity effect. This is accomplished via a series of algorithms that involve dissecting the data into overlapping zones of different types. Pattern data manipulation is reduced by an algorithm involving generation of additional data, tagging, and sorting.