Electron transport in InGaAs/AlInAs heterostructures and its impact on transistor performance

Abstract

We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of field-effect transistor performance. Both quantum-well width and doping profile were varied with all layers lattice matched to the InP substrate. Electron transport properties in the structures were characterized using Hall, geometric magnetoresistance, and microwave velocity-field measurements, and transistor performance in terms of transconductance and channel current in 1.8- and 0.5-μm gate-length devices. Transconductances in 0.5-μm gate-length transistors were as high as 590 mS/mm and were more directly correlated to the peak electron velocity than to the low-field mobility. © 1994 American Institute of Physics.